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| AP4513GM Pb Free Plating Product Advanced Power Electronics Corp. Simple Drive Requirement Low On-resistance Fast Switching Performance RoHS Compliant SO-8 SO-8 D2 D1 D2 D1 D1 D1 D2 D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID G2 G2 S2 G1 S2 S1 G1 S1 35V 36m 5.8A -35V 68m -4.3A P-CH BVDSS RDS(ON) ID Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. G1 D1 D2 G2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 35 20 5.8 4.7 20 2 0.016 4 Units -35 20 -4.3 -3.4 -20 V V A A A W W/ 12.5 -5 0.05 mJ A mJ P-channel Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 1 12.5 5 0.05 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit /W Data and specifications subject to change without notice 200502053-1/7 AP4513GM N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS BVDSS/Tj o Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 35 1 - Typ. 0.03 7 6 2 3 8 7 16 3 470 90 60 Max. Units 36 60 3 1 25 100 10 750 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5A VGS=4.5V, ID=3A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70oC) o VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=20V ID=5A VDS=28V VGS=4.5V VDS=15V ID=1A RG=3.3,VGS=10V RD=15 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=1.7A, VGS=0V IS=5A, VGS=0V dI/dt=100A/s Min. - Typ. 17 11 Max. Units 1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge 2/7 AP4513GM P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=70 C) o o Test Conditions VGS=0V, ID=-250uA 2 Min. -35 -1 - Typ. -0.03 6 6 1 4 8 7 20 4 410 95 70 Max. Units 68 100 -3 -1 -25 100 10 660 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25,ID=-1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VGS=-10V, ID=-4A VGS=-4.5V, ID=-2A VDS=VGS, ID=-250uA VDS=-10V, ID=-4A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS=20V ID=-4A VDS=-28V VGS=-4.5V VDS=-15V ID=-1A RG=3.3,VGS=-10V RD=15 VGS=0V VDS=-25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=-1.7A, VGS=0V IS=-4A, VGS=0V dI/dt=-100A/s Min. - Typ. 21 16 Max. Units -1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 135/W when mounted on min. copper pad. 4.Starting Tj=25oC , VDD=25V , L=1mH , R G=25 3/7 AP4513GM N-Channel 30 30 T A =25 o C 10V 7.0V ID , Drain Current (A) 5.0V T A = 150 o C 10V 7.0V ID , Drain Current (A) 20 20 5.0V 4.5V 10 4.5V 10 V G =3.0V V G =3.0V 0 0 1 2 3 4 5 0 0 1 2 3 4 5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 65 1.8 I D =3A 55 T A =25 C Normalized RDS(ON) 1.4 o I D =5A V G =10V RDS(ON0 (m ) 45 1.0 35 25 2 4 6 8 10 0.6 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 5 4 3 T j =150 o C 2 T j =25 o C 1 0 0 0.2 0.4 0.6 0.8 1 1.2 Normalized VGS(th) (V) 1.1 IS(A) 0.7 0.3 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j ,Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 4/7 AP4513GM N-Channel f=1.0MHz 12 1000 VGS , Gate to Source Voltage (V) ID=5A V DS =2 8 V 9 C iss C (pF) 6 100 C oss C rss 3 0 0 4 8 12 16 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty factor=0.5 Normalized Thermal Response (Rthja) 10 0.2 1ms ID (A) 10ms 1 0.1 0.1 0.05 0.02 0.01 100ms 1s 0.1 PDM Single Pulse 0.01 t T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja =135o C/W T A =25 o C Single Pulse 10s DC 10 100 0.01 0.1 1 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off)tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 5/7 AP4513GM P-Channel 30 30 T A =25 C o - 10V - 7.0V - 5.0V -ID , Drain Current (A) - 4.5V 20 T A = 150 C o - 10V - 7.0V -ID , Drain Current (A) 20 - 5.0V - 4.5V 10 10 V G = - 3.0V V G = - 3.0V 0 0 1 2 3 4 5 6 0 0 1 2 3 4 5 6 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 95 1.8 I D = -2 A RDS(ON) (m) 85 T A =25 C Normalized RDS(ON) 1.4 o I D = -4 A V G = - 10V 75 1.0 65 55 2 4 6 8 10 0.6 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 4 3 Normalized -VGS(th) (V) 1.1 -IS(A) 2 T j =150 o C T j =25 o C 0.7 1 0 0.3 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 6/7 AP4513GM P-Channel f=1.0MHz 12 1000 10 -VGS , Gate to Source Voltage (V) I D =-4A V DS =-28V C iss 8 C (pF) 6 100 C oss C rss 4 2 0 0.0 3.0 6.0 9.0 12.0 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty factor=0.5 Normalized Thermal Response (R thja) 10 0.2 1ms -ID (A) 1 0.1 0.1 0.05 10ms 100ms 0.02 0.01 PDM 0.01 Single Pulse t T Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja=135 oC/W 0.1 T A =25 C Single Pulse 0.01 0.1 1 10 o 1s 10s DC 100 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 7/7 |
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